Infineon makes power devices on 300mm silicon carbide
What happened
A Nov 10 report said Infineon processed its first functional power devices on 300mm silicon carbide (SiC) wafers at its Villach plant in Austria, using existing silicon manufacturing equipment. Infineon says it is the first company to reach this milestone in a full-scale fab environment. A larger 300mm wafer yields 2.3 times as many chips per wafer as a 200mm one. The first processed 300mm SiC wafers will be shown at electronica in Munich from Nov 10.
Written by AI from the coverage · updated 2 days ago
Coverage
Follow the reports to see the story from different sides.
- Hacker News front pageThe first 300-millimeter power silicon carbide (SiC) wafer
Infineon 在奥地利 Villach 工厂用现有硅制造设备，将 300 毫米碳化硅（SiC）晶圆加工成功能性功率器件，成为首家在全规模晶圆厂环境中实现该里程碑的公司。300 毫米晶圆直径更大，每片可产出芯片数量是 200 毫米晶圆的 2.3 倍。首批加工完成的 300 毫米 SiC 晶圆将于 11 月 10 日起在慕尼黑 electronica 展会展出。
Heat over time
Heat now 3·Comparable peak 10（Nov 10 04:00）·Comparable change over 24 hours -51%
The trend only compares accounts observed without gaps, so its range may be smaller than the current heat. Hover or tap the chart for each hour; the left and right arrow keys step through it.